International Science Index

4
10008656
A Comparison between Reagents Extracted from Tree Leaves for Spectrophotometric Determination of Hafnium(IV)
Abstract:

The main goal of this paper was to make use of green reagents as a substitute of perilous synthetic reagents and organic solvents for spectrophotometric determination of hafnium(IV). The extracts taken from six different kinds of tree leaves including Acer negundo, Ficus carica, Cerasus avium, Chimonanthus, Salix babylonica and Pinus brutia, were applied as green reagents for the experiments. In 6-M hydrochloric acid, hafnium reacted with the reagent to form a yellow product and showed maximum absorbance at 421 nm. Among tree leaves, Chimonanthus showed satisfactory results with a molar absorptivity value of 0.61 × 104 l mol-1 cm-1 and the method was linear in the 0.3-9 µg mL -1 concentration range. The detection limit value was 0.064 µg mL-1. The proposed method was simple, low cost, clean, and selective.

Paper Detail
95
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3
10008698
A Green Method for Selective Spectrophotometric Determination of Hafnium(IV) with Aqueous Extract of Ficus carica Tree Leaves
Abstract:

A clean spectrophotometric method for the determination of hafnium by using a green reagent, acidic extract of Ficus carica tree leaves is developed. In 6-M hydrochloric acid, hafnium reacts with this reagent to form a yellow product. The formed product shows maximum absorbance at 421 nm with a molar absorptivity value of 0.28 × 104 l mol⁻¹ cm⁻¹, and the method was linear in the 2-11 µg ml⁻¹ concentration range. The detection limit value was found to be 0.312 µg ml⁻¹. Except zirconium and iron, the selectivity was good, and most of the ions did not show any significant spectral interference at concentrations up to several hundred times. The proposed method was green, simple, low cost, and selective.

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86
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2
6868
Low resistivity Hf/Al/Ni/Au Ohmic Contact Scheme to n-Type GaN
Abstract:
The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09´10-6 Ω·cm2 after annealing at 650 oC in vacuum. A detailed mechanism of ohmic contact formation is discussed. By using different chemical analyses, it is anticipated that the formation of Hf-Al-N alloy might be responsible to form low temperature ohmic contacts for the Hf-based scheme to n-GaN.
Paper Detail
1862
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1
16005
Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs
Abstract:
MOSCAPs of various combinations of Hafnium oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized. The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed hard breakdown and negligible degradation of reliability under stress.
Paper Detail
901
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