International Science Index

3
10008729
Investigation of Mesoporous Silicon Carbonization Process
Abstract:

In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experimental samples were obtained by the method of chemical vapor deposition and investigated by scanning electron microscopy. Analytic expressions were obtained for the effective diffusion factor and carbon atoms diffusion length in a porous system. The proposed model takes into account the processes of Knudsen diffusion, coagulation and overgrowing of pores during the formation of a silicon carbide layer.

Paper Detail
109
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2
10486
Improvement of Photoluminescence Uniformity of Porous Silicon by using Stirring Anodization Process
Abstract:
The electrolyte stirring method of anodization etching process for manufacturing porous silicon (PS) is reported in this work. Two experimental setups of nature air stirring (PS-ASM) and electrolyte stirring (PS-ESM) are employed to clarify the influence of stirring mechanisms on electrochemical etching process. Compared to traditional fabrication without any stirring apparatus (PS-TM), a large plateau region of PS surface structure is obtained from samples with both stirring methods by the 3D-profiler measurement. Moreover, the light emission response is also improved by both proposed electrolyte stirring methods due to the cycling force in electrolyte could effectively enhance etch-carrier distribution while the electrochemical etching process is made. According to the analysis of statistical calculation of photoluminescence (PL) intensity, lower standard deviations are obtained from PS-samples with studied stirring methods, i.e. the uniformity of PL-intensity is effectively improved. The calculated deviations of PL-intensity are 93.2, 74.5 and 64, respectively, for PS-TM, PS-ASM and PS-ESM.
Paper Detail
1287
downloads
1
15776
Surface Morphology and Formation of Nanostructured Porous GaN by UV-assisted Electrochemical Etching
Abstract:

This article reports on the studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties of porous GaN sample were compared to the corresponding as grown GaN. Porosity induced photoluminescence (PL) intensity enhancement was found in these samples. The resulting porous GaN displays blue shifted PL spectra compared to the as-grown GaN. Appearance of the blue shifted emission is correlated with the development of highly anisotropic structures in the morphology. An estimate of the size of the GaN nanostructure can be obtained with the help of a quantized state effective mass theory.

Paper Detail
1337
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