International Science Index

4
10008608
Spin-Dependent Transport Signatures of Bound States: From Finger to Top Gates
Abstract:
Spin-orbit gap feature in energy dispersion of one-dimensional devices is revealed via strong spin-orbit interaction (SOI) effects under Zeeman field. We describe the utilization of a finger-gate or a top-gate to control the spin-dependent transport characteristics in the SOI-Zeeman influenced split-gate devices by means of a generalized spin-mixed propagation matrix method. For the finger-gate system, we find a bound state in continuum for incident electrons within the ultra-low energy regime. For the top-gate system, we observe more bound-state features in conductance associated with the formation of spin-associated hole-like or electron-like quasi-bound states around band thresholds, as well as hole bound states around the reverse point of the energy dispersion. We demonstrate that the spin-dependent transport behavior of a top-gate system is similar to that of a finger-gate system only if the top-gate length is less than the effective Fermi wavelength.
Paper Detail
92
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3
10004653
Describing the Fine Electronic Structure and Predicting Properties of Materials with ATOMIC MATTERS Computation System
Abstract:
We present the concept and scientific methods and algorithms of our computation system called ATOMIC MATTERS. This is the first presentation of the new computer package, that allows its user to describe physical properties of atomic localized electron systems subject to electromagnetic interactions. Our solution applies to situations where an unclosed electron 2p/3p/3d/4d/5d/4f/5f subshell interacts with an electrostatic potential of definable symmetry and external magnetic field. Our methods are based on Crystal Electric Field (CEF) approach, which takes into consideration the electrostatic ligands field as well as the magnetic Zeeman effect. The application allowed us to predict macroscopic properties of materials such as: Magnetic, spectral and calorimetric as a result of physical properties of their fine electronic structure. We emphasize the importance of symmetry of charge surroundings of atom/ion, spin-orbit interactions (spin-orbit coupling) and the use of complex number matrices in the definition of the Hamiltonian. Calculation methods, algorithms and convention recalculation tools collected in ATOMIC MATTERS were chosen to permit the prediction of magnetic and spectral properties of materials in isostructural series.
Paper Detail
487
downloads
2
16146
Study of Two Writing Schemes for a Magnetic Tunnel Junction Based On Spin Orbit Torque
Abstract:

MRAM technology provides a combination of fast access time, non-volatility, data retention and endurance. While a growing interest is given to two-terminal Magnetic Tunnel Junctions (MTJ) based on Spin-Transfer Torque (STT) switching as the potential candidate for a universal memory, its reliability is dramatically decreased because of the common writing/reading path. Three-terminal MTJ based on Spin-Orbit Torque (SOT) approach revitalizes the hope of an ideal MRAM. It can overcome the reliability barrier encountered in current two-terminal MTJs by separating the reading and the writing path. In this paper, we study two possible writing schemes for the SOT-MTJ device based on recently fabricated samples. While the first is based on precessional switching, the second requires the presence of permanent magnetic field. Based on an accurate Verilog-A model, we simulate the two writing techniques and we highlight advantages and drawbacks of each one. Using the second technique, pioneering logic circuits based on the three-terminal architecture of the SOT-MTJ described in this work are under development with preliminary attractive results.

Paper Detail
2524
downloads
1
2921
Magnetic Properties of NiO and MnO by LSDA+U
Abstract:
The spin (ms) and orbital (mo) magnetic moment of the antiferromagnetic NiO and MnO have been studied in the local spin density approximation (LSDA+U) within full potential linear muffin-tin orbital (FP-LMTO method with in the coulomb interaction U varying from 0 to 10eV, exchange interaction J, from 0 to 1.0eV, and volume compression VC in range of 0 to 80%. Our calculated results shown that the spin magnetic moments and the orbital magnetic moments increase linearly with increasing U and J. While the interesting behaviour appears when volume compression is greater than 70% for NiO and 50% for MnO at which ms collapses. Further increase of volume compression to be at 80% leads to the disappearance of both magnetic moments.
Paper Detail
1443
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